View T410H_144569.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www..com
T410H
High temperature 4 A sensitive TRIACs
Features

A2
Medium current TRIAC Logic level sensitive TRIAC 150 C max. Tj turn-off commutation Clip bounding RoHS (2002/95/EC) compliant package
A2 G A1
Applications

The T410H is designed for the control of AC actuators in appliances and industrial systems. The multi-port drive of the microcontroller can control the multiple loads of such appliances and systems through this sensitive gate TRIAC.
G A2 A1
TO-220AB T410H-6T
Description
Specifically designed to operate at 150 C, the new 4 A T410H TRIAC provides an enhanced performance in terms of power loss and thermal dissipation. This allows the optimization of the heatsink size, leading to space and cost effectiveness when compared to electromechanical solutions. Based on ST logic level technology, the T410H offers an IGT lower than 10 mA and specified minimal commutation and high noise immunity levels valid up to the Tj max.
Table 1.
Symbol IT(RMS)
Device summary
Value 4 600 10 Unit A V mA
VDRM/VRRM IGT MAX
May 2009
Doc ID 15712 Rev 1
1/9
www.st.com 9
www..com Characteristics
T410H
1
Table 2.
Symbol IT(RMS) ITSM I t dI/dt
Characteristics
Absolute maximum ratings
Parameter On-state rms current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 C) It Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns F = 60 Hz F = 50 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 s Tj = 150 C Tj = 25 C Tj = 150 C Tj = 150 C Tc = 141 C t = 16.7 ms t = 20 ms Value 4 42 A 40 11 50 VDRM/VRRM + 100 4 1 - 40 to + 150 - 40 to + 150 A s A/s V A W C Unit A
VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range
Table 3.
Symbol IGT VGT VGD IH
(1)
Electrical characteristics (Tj = 25 C, unless otherwise specified)
Test conditions VD = 12 V RL = 33 VD = VDRM, RL = 3.3 k IT = 100 mA I - III IG = 1.2 IGT VD = 67% VDRM, gate open, Tj = 150 C Logic level, 0.1 V/s, Tj = 150 C Logic level, 15 V/s, Tj = 150 C Quadrant I - II - III I - II - III I - II - III 0.15 25 30 mA II 75 5.7 A/ms 1.5 35 V/s Min. 1 Max. 10 1.0 Unit mA V V mA
IL dV/dt (1) (dI/dt)c (1)
1. For both polarities of A2 referenced to A1.
2/9
Doc ID 15712 Rev 1
www..com T410H
Table 4.
Symbol VT (1) Vt0 Rd
(1) (1)
Characteristics
Static characteristics
Test conditions ITM = 5.6 A, tp = 380 s Threshold voltage Dynamic resistance VDRM = VRRM Tj = 25 C Tj = 150 C Tj = 150 C Tj = 25 C Tj = 150 C MAX. MAX. MAX. MAX. MAX. MAX. MAX. Value 1.5 0.80 80.0 5 2.2 1.75 1.5 mA Unit V V m A
IDRM IRRM
VD/VR = 400 V (at peak mains voltage) Tj = 150 C VD/VR = 200 V (at peak mains voltage) Tj = 150 C
1. for both polarities of A2 referenced to A1.
Table 5.
Symbol Rth(j-c) Rth(j-a)
Thermal resistance
Parameter Junction to case (AC) Junction to ambient Value 2.20 C/W 60 Unit
Figure 1.
Maximum power dissipation versus Figure 2. on-state rms current (full cycle)
IT(RMS)(A)
4
On-state rms current versus case temperature (full cycle)
P(W)
4
3
3
2
2
1
1
IT(RMS)(A)
TC(C) 0
0 0 1 2 3 4
0
25
50
75
100
125
150
Figure 3.
On-state rms current versus ambient temperature (free air convection, full cycle)
Figure 4.
Relative variation of thermal impedance, versus pulse duration
IT(RMS)(A)
3.0 2.5 2.0 1.5 1.0 0.5
K=[Zth/Rth]
1.E+00
Zth(j-c)
1.E-01
Zth(j-a)
1.E-02
Ta (C)
0.0 0 25 50 75 100 125 150
1.E-03 1.E-03
tp(s)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Doc ID 15712 Rev 1
3/9
www..com Characteristics
T410H
Figure 5.
Relative variation of gate trigger Figure 6. current and voltage versus junction temperature (typical values)
2.0
IGT Q3
Relative variation of holding and latching current versus junction temperature (typical values)
IGT, VGT[T j] / IGT, VGT[T j=25 C]
3.0 2.5 2.0 1.5 1.0 0.5
IH, IL [T j] / IH, IL [T j=25 C]
IGT Q1-Q2
1.5
IL IH
1.0
VGT Q1-Q2-Q3
0.5
Tj(C)
0.0 -50 -25 0 25 50 75 100 125 150
Tj(C)
0.0 -50 -25 0 25 50 75 100 125 150
Figure 7.
Surge peak on-state current versus number of cycles
Figure 8.
Non-repetitive surge peak on-state current and corresponding value of I2t
dI/dt limitation: 50 A/s
ITSM(A)
ITSM (A), It (As)
1000
Tj initial=25 C
45 40 35 30 25 20 15 10 5 0 1 10 100 1000
Repetitive TC=141 C Non repetitive Tj initial=25C
t=20ms
One cycle
ITSM
100
10
It
Number of cycles
Sinusoidal pulse width tp < 10 ms
tP(ms)
1.00 10.00
1 0.01 0.10
Figure 9.
On-state characteristics (maximum values)
Figure 10. Relative variation of critical rate of decrease of main current versus junction temperature
(dI/dt)C [T j] / (dI/dt)c [T j=150 C]
11 10 9 8 7 6
ITM (A)
100
Tj max Vto = 0.80 V Rd = 80 m
10
Tj=150 C Tj=25 C
5 4 3 2 1
VTM (V)
T j(C)
25 50 75 100 125 150
1 0 1 2 3 4 5
0
4/9
Doc ID 15712 Rev 1
www..com T410H
Characteristics
Figure 11. Relative variation of critical rate of decrease of main current versus reapplied dV/dt (typical values)
(dI/dt)c [ (dV/dt)c ] / Specified (dI/dt)c
Figure 12. Relative variation of static dV/dt immunity versus junction temperature
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
dV/dt [T j] / dV/dt [T j=150 C]
VD=VR=400 V
4
3
2
1
(dV/dt)C (V/s)
T j(C)
25 50 75 100 125 150
0 0.1 1.0 10.0 100.0
Figure 13. Variation of leakage current versus Figure 14. Acceptable case to ambient thermal junction temperature for different resistance versus repetitive peak values of blocking voltage off-state voltage
IDRM/IRRM [Tj;V DRM/ VRRM]/IDRM/IRRM [Tj=150C; 600V]
1.0E+00
VDRM=VRRM=600 V
Rth(c-a) (C/W)
80 70 60
VDRM=VRRM=400 V
Rth(j-c)=2.2 C/W TJ=150 C
1.0E-01
50
1.0E-02
VDRM=VRRM=200 V
40 30
1.0E-03
20 10
VAC PEAK(V)
T j(C)
1.0E-04 25 50 75 100 125 150
0 200 300
400
500
600
Doc ID 15712 Rev 1
5/9
www..com Ordering information scheme
T410H
2
Ordering information scheme
Figure 15. Ordering information scheme
T
Triac series Current 4=4A Sensitivity 10 = 10 mA High temperature Voltage 6 = 600 V Package T = TO-220AB
4
10 H - 6 T
6/9
Doc ID 15712 Rev 1
www..com T410H
Package information
3
Package information

Epoxy meets UL94, V0 Recommended torque 0.4 to 0.6 N*m
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Table 6. TO-220AB dimensions
Dimensions Ref. Millimeters Min. A a1
B OI L F A I4 l3 a1 l2 c2 b2 C
Inches Min. Typ. Max. 0.625 0.147
Typ.
Max.
15.20 3.75 13.00 10.00 0.61 1.23 4.40 0.49 2.40 2.40 6.20 3.75
15.90 0.598
a2 B b1 b2 C c1 c2
14.00 0.511 10.40 0.393 0.88 1.32 4.60 0.70 2.72 2.70 6.60 3.85 0.024 0.048 0.173 0.019 0.094 0.094 0.244 0.147
0.551 0.409 0.034 0.051 0.181 0.027 0.107 0.106 0.259 0.151
a2
e
M b1 e c1
F OI I4 L l2 l3 M
15.80 16.40 16.80 0.622 0.646 0.661 2.65 1.14 1.14 2.60 2.95 1.70 1.70 0.104 0.044 0.044 0.102 0.116 0.066 0.066
Doc ID 15712 Rev 1
7/9
www..com Ordering information
T410H
4
Ordering information
Table 7. Ordering information
Marking T410H 6T Package TO-220AB Weight 2.3 g Base qty 50 Delivery mode Tube
Order code T410H-6T
5
Revision history
Table 8.
Date 15-May-2009
Document revision history
Revision 1 First issue. Changes
8/9
Doc ID 15712 Rev 1
www..com T410H
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
(c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com
Doc ID 15712 Rev 1
9/9

▲Up To Search▲

Price & Availability of T410H

	To Download T410H Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .